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TK4A60DB(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK4A60DB(STA4,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

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Datasheet:

Description:

MOSFET N-CH 600V 3.7A TO220SIS

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 1.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	35W (Tc)
Series	π-MOSVII
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK4A60