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TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK4R3E06PL,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 80A TO220

Quantity:

Delivery:

Payment:

In Stock : 360

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3775

$1.3775
10

$1.1267

$11.267
100

$0.87647

$87.647
500

$0.742938

$371.469
1000

$0.605207

$605.207
2000

$0.569734

$1139.468
5000

$0.542602

$2713.01
10000

$0.51755

$5175.5

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	87W (Tc)
Series	U-MOSIX-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK4R3E06