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TK55S10N1,LQ

Toshiba Semiconductor and Storage

Product No:

TK55S10N1,LQ

Package:

DPAK+

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 55A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3589

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7075

    $2.7075

  • 10

    $2.4358

    $24.358

  • 100

    $1.957855

    $195.7855

  • 500

    $1.608597

    $804.2985

  • 1000

    $1.33284

    $1332.84

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 500µA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 157W (Tc)
Series U-MOSVIII-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK55S10

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