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TK5A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK5A55D(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 550V 5A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2635

    $1.2635

  • 10

    $1.1324

    $11.324

  • 100

    $0.88274

    $88.274

  • 500

    $0.72922

    $364.61

  • 1000

    $0.5757

    $575.7

  • 2000

    $0.53732

    $1074.64

  • 5000

    $0.510454

    $2552.27

  • 10000

    $0.491264

    $4912.64

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.7Ohm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 1mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 550 V
Power Dissipation (Max) 35W (Tc)
Series π-MOSVII
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK5A55

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