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TK5Q65W,S1Q

Toshiba Semiconductor and Storage

Product No:

TK5Q65W,S1Q

Package:

I-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 5.2A IPAK

Quantity:

Delivery:

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Payment:

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In Stock : 55

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.1495

    $1.1495

  • 10

    $1.0279

    $10.279

  • 100

    $0.80104

    $80.104

  • 500

    $0.66177

    $330.885

  • 1000

    $0.522443

    $522.443

  • 2000

    $0.487616

    $975.232

  • 5000

    $0.463239

    $2316.195

  • 10000

    $0.445826

    $4458.26

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.22Ohm @ 2.6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 170µA
Supplier Device Package I-Pak
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 60W (Tc)
Series DTMOSIV
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK5Q65

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