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TK62N60W,S1VF

Toshiba Semiconductor and Storage

Product No:

TK62N60W,S1VF

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 61.8A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 18

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $14.9815

    $14.9815

  • 10

    $13.77025

    $137.7025

  • 100

    $11.629805

    $1162.9805

  • 500

    $10.345519

    $5172.7595

  • 1000

    $9.489341

    $9489.341

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 40mOhm @ 30.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 400W (Tc)
Series DTMOSIV
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK62N60

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