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TK6P65W,RQ

Toshiba Semiconductor and Storage

Product No:

TK6P65W,RQ

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 5.8A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 58

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2825

    $1.2825

  • 10

    $1.1438

    $11.438

  • 100

    $0.891575

    $89.1575

  • 500

    $0.736516

    $368.258

  • 1000

    $0.581457

    $581.457

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.05Ohm @ 2.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 180µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 60W (Tc)
Series DTMOSIV
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK6P65

TK6P65W,RQ Tags

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