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TK6R9P08QM,RQ

Toshiba Semiconductor and Storage

Product No:

TK6R9P08QM,RQ

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

UMOS10 DPAK 80V 6.9MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 6411

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.045

    $1.045

  • 10

    $0.855

    $8.55

  • 100

    $0.664905

    $66.4905

  • 500

    $0.563616

    $281.808

  • 1000

    $0.459116

    $459.116

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.9mOhm @ 31A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 500µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 89W (Tc)
Series U-MOSX-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)

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