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TK72E12N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK72E12N1,S1X

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 120V 72A TO-220

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.4mOhm @ 36A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 255W (Tc)
Series U-MOSVIII-H
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 72A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK72E12

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