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TK7J90E,S1E

Toshiba Semiconductor and Storage

Product No:

TK7J90E,S1E

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 900V 7A TO3P

Quantity:

Delivery:

Payment:

In Stock : 14

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.47

$2.47
10

$2.21445

$22.1445
100

$1.78011

$178.011
500

$1.462525

$731.2625
1000

$1.211801

$1211.801
2000

$1.12823

$2256.46
5000

$1.086439

$5432.195

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 700µA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	200W (Tc)
Series	π-MOSVIII
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK7J90