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TK7R0E08QM,S1X

Toshiba Semiconductor and Storage

Product No:

TK7R0E08QM,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

UMOS10 TO-220AB 80V 7MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 122

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3205

    $1.3205

  • 10

    $1.083

    $10.83

  • 100

    $0.84227

    $84.227

  • 500

    $0.713906

    $356.953

  • 1000

    $0.581552

    $581.552

  • 2000

    $0.547466

    $1094.932

  • 5000

    $0.521388

    $2606.94

  • 10000

    $0.497325

    $4973.25

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 7mOhm @ 32A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 500µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 87W (Tc)
Series U-MOSX-H
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube

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