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TK8A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK8A50D(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 500V 8A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 44

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.5295

    $1.5295

  • 10

    $1.3699

    $13.699

  • 100

    $1.068085

    $106.8085

  • 500

    $0.88236

    $441.18

  • 1000

    $0.696597

    $696.597

  • 2000

    $0.650161

    $1300.322

  • 5000

    $0.617652

    $3088.26

  • 10000

    $0.594434

    $5944.34

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 40W (Tc)
Series π-MOSVII
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK8A50

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