Home / Single FETs, MOSFETs / TP65H015G5WS

TP65H015G5WS

Transphorm

Product No:

TP65H015G5WS

Manufacturer:

Transphorm

Package:

TO-247-3

Batch:

Datasheet:

Description:

650 V 95 A GAN FET

Quantity:

Delivery:

Payment:

In Stock : 69

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$30.647

$30.647
10

$27.23365

$272.3365
100

$23.81954

$2381.954

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TP65H015G5WS, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TP65H015G5WS and the required quantity in your RFQ. IICSEMI provides the latest quote for TP65H015G5WS without requiring registration. Latest information on TP65H015G5WS: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TP65H015G5WS latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5218 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	18mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 2mA
Supplier Device Package	TO-247-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	266W (Tc)
Series	SuperGaN™
Package / Case	TO-247-3
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube