Home / Single FETs, MOSFETs / TP65H050G4BS

TP65H050G4BS

Transphorm

Product No:

TP65H050G4BS

Manufacturer:

Transphorm

Package:

TO-263

Batch:

Datasheet:

Description:

650 V 34 A GAN FET

Quantity:

Delivery:

Payment:

In Stock : 388

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$11.913

$11.913
10

$10.49085

$104.9085
100

$9.07307

$907.307
500

$8.22244

$4111.22
1000

$7.541955

$7541.955

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TP65H050G4BS, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TP65H050G4BS and the required quantity in your RFQ. IICSEMI provides the latest quote for TP65H050G4BS without requiring registration. Latest information on TP65H050G4BS: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TP65H050G4BS latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	119W (Tc)
Series	SuperGaN®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TP65H050