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TP65H070G4PS

Transphorm

Product No:

TP65H070G4PS

Manufacturer:

Transphorm

Package:

TO-220AB

Batch:

Datasheet:

Description:

GANFET N-CH 650V 29A TO220

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$8.2175

$8.2175
10

$7.04615

$70.4615
100

$5.87214

$587.214
500

$5.1813

$2590.65
1000

$4.66317

$4663.17
2000

$4.369563

$8739.126

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	638 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	85mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.7V @ 700µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	96W (Tc)
Series	SuperGaN®
Package / Case	TO-220-3
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube