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TP65H150BG4JSG-TR

Transphorm

Product No:

TP65H150BG4JSG-TR

Manufacturer:

Transphorm

Package:

8-PQFN (5x6)

Batch:

Datasheet:

Description:

GANFET N-CH 650V 13A QFN5X6

Quantity:

Delivery:

Payment:

In Stock : 3953

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.762

$3.762
10

$3.1597

$31.597
100

$2.55607

$255.607
500

$2.272096

$1136.048
1000

$1.945486

$1945.486
2000

$1.831876

$3663.752

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	4.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 6V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 500µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	83W (Tc)
Series	SuperGaN®
Package / Case	8-PowerTDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Transphorm
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)