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TP65H150G4LSG-TR

Transphorm

Product No:

TP65H150G4LSG-TR

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

Batch:

Datasheet:

Description:

650 V 13 A GAN FET

Quantity:

Delivery:

Payment:

In Stock : 2906

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$5.0065

$5.0065
10

$4.20565

$42.0565
100

$3.402425

$340.2425
500

$3.024344

$1512.172
1000

$2.589596

$2589.596

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	2-PQFN (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	52W (Tc)
Series	-
Package / Case	2-PowerTSFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)