Home / Single FETs, MOSFETs / TPCC8104,L1Q(CM

TPCC8104,L1Q(CM

Toshiba Semiconductor and Storage

Product No:

TPCC8104,L1Q(CM

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-TSON Advance (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 20A 8TSON

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TPCC8104,L1Q(CM, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TPCC8104,L1Q(CM and the required quantity in your RFQ. IICSEMI provides the latest quote for TPCC8104,L1Q(CM without requiring registration. Latest information on TPCC8104,L1Q(CM: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TPCC8104,L1Q(CM latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 500µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 27W (Tc)
Series	U-MOSVI
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPCC8104