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TPH1R306PL1,LQ

Toshiba Semiconductor and Storage

Product No:

TPH1R306PL1,LQ

Package:

8-SOP Advance (5x5.75)

Batch:

-

Datasheet:

-

Description:

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 9850

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.2135

    $2.2135

  • 10

    $1.83635

    $18.3635

  • 100

    $1.46129

    $146.129

  • 500

    $1.236463

    $618.2315

  • 1000

    $1.049114

    $1049.114

  • 2000

    $0.996664

    $1993.328

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.34mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 960mW (Ta), 210W (Tc)
Series U-MOSIX-H
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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