minImg

TPH2010FNH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH2010FNH,L1Q

Package:

8-SOP Advance (5x5)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 5.6A 8SOP

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 9974

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.482

    $1.482

  • 10

    $1.3243

    $13.243

  • 100

    $1.03284

    $103.284

  • 500

    $0.853195

    $426.5975

  • 1000

    $0.673569

    $673.569

  • 2000

    $0.628662

    $1257.324

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06
IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TPH2010FNH,L1Q, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TPH2010FNH,L1Q and the required quantity in your RFQ. IICSEMI provides the latest quote for TPH2010FNH,L1Q without requiring registration. Latest information on TPH2010FNH,L1Q: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TPH2010FNH,L1Q latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 198mOhm @ 2.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 200µA
Supplier Device Package 8-SOP Advance (5x5)
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Series U-MOSVIII-H
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TPH2010

TPH2010FNH,L1Q Tags

  • TPH2010FNH
  • L1Q
  • TPH2010FNH
  • L1Q PDF
  • TPH2010FNH
  • L1Q datasheet
  • TPH2010FNH
  • L1Q specifications
  • TPH2010FNH
  • L1Q images
  • buy TPH2010FNH
  • L1Q
  • TPH2010FNH
  • L1Q price
  • TPH2010FNH
  • L1Q category
  • TPH2010FNH
  • L1Q related products
  • TPH2010FNH
  • L1Q related news