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TPH5R60APL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH5R60APL,L1Q

Package:

8-SOP Advance (5x5)

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR N-C

Quantity:

Delivery:

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Payment:

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In Stock : 4750

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2445

    $1.2445

  • 10

    $1.01555

    $10.1555

  • 100

    $0.78983

    $78.983

  • 500

    $0.669503

    $334.7515

  • 1000

    $0.545376

    $545.376

  • 2000

    $0.513408

    $1026.816

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 500µA
Supplier Device Package 8-SOP Advance (5x5)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 960mW (Ta), 132W (Tc)
Series U-MOSIX-H
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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