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TPN11003NL,LQ

Toshiba Semiconductor and Storage

Product No:

TPN11003NL,LQ

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 30V 11A 8TSON-ADV

Quantity:

Delivery:

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Payment:

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In Stock : 2886

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6175

    $0.6175

  • 10

    $0.54435

    $5.4435

  • 100

    $0.417525

    $41.7525

  • 500

    $0.330068

    $165.034

  • 1000

    $0.264052

    $264.052

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 100µA
Supplier Device Package 8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 700mW (Ta), 19W (Tc)
Series U-MOSVIII-H
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TPN11003

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