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TPN8R903NL,LQ

Toshiba Semiconductor and Storage

Product No:

TPN8R903NL,LQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-TSON Advance (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 20A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 8796

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.6745

$0.6745
10

$0.59185

$5.9185
100

$0.45391

$45.391
500

$0.358853

$179.4265
1000

$0.28708

$287.08

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.9mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 100µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 22W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPN8R903