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TW070J120B,S1Q

Toshiba Semiconductor and Storage

Product No:

TW070J120B,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 36A TO3P

Quantity:

Delivery:

Payment:

In Stock : 103

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$29.6305

$29.6305
10

$26.3283

$263.283
100

$23.028

$2302.8

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	5.8V @ 20mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	272W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	TW070J120