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TW083N65C,S1F

Toshiba Semiconductor and Storage

Product No:

TW083N65C,S1F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-247

Batch:

Datasheet:

Description:

G3 650V SIC-MOSFET TO-247 83MOH

Quantity:

Delivery:

Payment:

In Stock : 172

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$11.685

$11.685
10

$10.29515

$102.9515
100

$8.90416

$890.416
500

$8.069395

$4034.6975
1000

$7.401583

$7401.583

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	873 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	113mOhm @ 15A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 600µA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	111W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube