Home / Single FETs, MOSFETs / XPN12006NC,L1XHQ

XPN12006NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN12006NC,L1XHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 20A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 10000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.121

$1.121
10

$0.9196

$9.196
100

$0.71535

$71.535
500

$0.606309

$303.1545
1000

$0.493905

$493.905
2000

$0.464949

$929.898

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of XPN12006NC,L1XHQ, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include XPN12006NC,L1XHQ and the required quantity in the RFQ. GOOD can get the latest quotations of XPN12006NC,L1XHQ without registration. XPN12006NC,L1XHQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 200µA
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	65W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPN12006