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XPN3R804NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN3R804NC,L1XHQ

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 40A 8TSON

Quantity:

Delivery:

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Payment:

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In Stock : 2930

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.349

    $1.349

  • 10

    $1.10105

    $11.0105

  • 100

    $0.85633

    $85.633

  • 500

    $0.725857

    $362.9285

  • 1000

    $0.59129

    $591.29

  • 2000

    $0.556634

    $1113.268

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 300µA
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 840mW (Ta), 100W (Tc)
Series U-MOSVIII
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number XPN3R804

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