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XPN9R614MC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN9R614MC,L1XHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET P-CH 40V 40A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 13766

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.2825

$1.2825
10

$1.0469

$10.469
100

$0.814055

$81.4055
500

$0.690004

$345.002
1000

$0.562077

$562.077
2000

$0.529131

$1058.262

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 500µA
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Series	Automotive, AEC-Q101, U-MOSVI
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPN9R614