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XPQ1R004PB,LXHQ

Toshiba Semiconductor and Storage

Product No:

XPQ1R004PB,LXHQ

Package:

L-TOGL™

Batch:

-

Datasheet:

-

Description:

40V U-MOS IX-H L-TOGL 1.0MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 7

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7455

    $2.7455

  • 10

    $2.28

    $22.8

  • 100

    $1.81488

    $181.488

  • 500

    $1.535675

    $767.8375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Supplier Device Package L-TOGL™
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 230W (Tc)
Series Automotive, AEC-Q101, U-MOSIX-H
Package / Case 8-PowerBSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number XPQ1R004

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