Home / Single FETs, MOSFETs / 2SK3798(STA4,Q,M)

2SK3798(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SK3798(STA4,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

POWER MOSFET TRANSISTOR TO-220(S

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for 2SK3798(STA4,Q,M), please feel free to contact us. To facilitate the processing of your inquiry, kindly include 2SK3798(STA4,Q,M) and the required quantity in your RFQ. IICSEMI provides the latest quote for 2SK3798(STA4,Q,M) without requiring registration. Latest information on 2SK3798(STA4,Q,M): #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs 2SK3798(STA4,Q,M) latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube