Home / FET, MOSFET Arrays / IPG20N04S4L07AATMA1

IPG20N04S4L07AATMA1

Infineon Technologies

Product No:

IPG20N04S4L07AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-10

Batch:

Datasheet:

Description:

MOSFET 2N-CH 8TDSON

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPG20N04S4L07AATMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPG20N04S4L07AATMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPG20N04S4L07AATMA1 without requiring registration. Latest information on IPG20N04S4L07AATMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPG20N04S4L07AATMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	7.2mOhm @ 17A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 30µA
Supplier Device Package	PG-TDSON-8-10
Drain to Source Voltage (Vdss)	40V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	65W
Current - Continuous Drain (Id) @ 25°C	20A
Mfr	Infineon Technologies
Package	Tape & Reel (TR)
Base Product Number	IPG20N