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IPG20N06S2L-35AATMA1

Infineon Technologies

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Infineon Technologies

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PG-TDSON-8-10

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N-CHANNEL POWER MOSFET

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	35mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 27µA
Supplier Device Package	PG-TDSON-8-10
Drain to Source Voltage (Vdss)	55V
Series	OptiMOS®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	65W (Tc)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Infineon Technologies
Package	Bulk
Base Product Number	IPG20N