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IPG20N10S4L22ATMA1

Infineon Technologies

Product No:

IPG20N10S4L22ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-4

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 8TDSON

Quantity:

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In Stock : 9489

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 17A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 25µA
Supplier Device Package PG-TDSON-8-4
Drain to Source Voltage (Vdss) 100V
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 60W
Current - Continuous Drain (Id) @ 25°C 20A
Mfr Infineon Technologies
Package Tape & Reel (TR)
Base Product Number IPG20N

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