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IRF8915

Infineon Technologies

Product No:

IRF8915

Manufacturer:

Infineon Technologies

Package:

8-SO

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 20V 8.9A 8-SOIC

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 20V
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W
Current - Continuous Drain (Id) @ 25°C 8.9A
Mfr Infineon Technologies
Package Tube
Base Product Number IRF89

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