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JAN2N6800

Microsemi Corporation

Product No:

JAN2N6800

Manufacturer:

Microsemi Corporation

Package:

TO-39

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Datasheet:

Description:

MOSFET N-CH 400V 3A TO39

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34.75 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.1Ohm @ 3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-39
Drain to Source Voltage (Vdss)	400 V
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Series	Military, MIL-PRF-19500/557
Package / Case	TO-205AF Metal Can
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk