Home / Single FETs, MOSFETs / NTLJF4156NT1G

NTLJF4156NT1G

Rochester Electronics, LLC

Product No:

NTLJF4156NT1G

Manufacturer:

Rochester Electronics, LLC

Package:

6-WDFN (2x2)

Batch:

Datasheet:

Description:

NTLJF4156N - POWER MOSFET, N-CHA

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NTLJF4156NT1G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NTLJF4156NT1G and the required quantity in your RFQ. IICSEMI provides the latest quote for NTLJF4156NT1G without requiring registration. Latest information on NTLJF4156NT1G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NTLJF4156NT1G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-WDFN (2x2)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	710mW (Ta)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Tj)
Mfr	Rochester Electronics, LLC
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Bulk