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NTZS3151PT1G

Rochester Electronics, LLC

Product No:

NTZS3151PT1G

Package:

SOT-563

Batch:

-

Datasheet:

-

Description:

NTZS3151P - MOSFET P-CHANNEL SIN

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 150mOhm @ 950mA, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-563
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 170mW (Ta)
Series -
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 860mA (Ta)
Mfr Rochester Electronics, LLC
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Bulk

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