Home / Single, Pre-Biased Bipolar Transistors / RN1106MFV,L3F

RN1106MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN1106MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

VESM

Batch:

Datasheet:

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : 22332

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.152

$0.152
10

$0.1387

$1.387
100

$0.07543

$7.543
500

$0.046436

$23.218
1000

$0.031664

$31.664
2000

$0.026914

$53.828

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Product Information

Parameter Info

User Guide

Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Resistor - Base (R1)	4.7 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	VESM
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	SOT-723
Power - Max	150 mW
Resistor - Emitter Base (R2)	47 kOhms
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	500nA
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Base Product Number	RN1106

Detail Info

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