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S2M0080120D

SMC Diode Solutions

Product No:

S2M0080120D

Manufacturer:

SMC Diode Solutions

Package:

TO-247AD

Batch:

-

Datasheet:

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Description:

MOSFET SILICON CARBIDE SIC 1200V

Quantity:

Delivery:

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Payment:

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In Stock : 276

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.4995

    $13.4995

  • 10

    $11.89685

    $118.9685

  • 100

    $10.28888

    $1028.888

  • 500

    $9.324326

    $4662.163

  • 1000

    $8.55266

    $8552.66

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1324 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package TO-247AD
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 231W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 41A (Tc)
Mfr SMC Diode Solutions
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube

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