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S2M0080120K

SMC Diode Solutions

Product No:

S2M0080120K

Manufacturer:

SMC Diode Solutions

Package:

TO-247-4

Batch:

Datasheet:

Description:

MOSFET SILICON CARBIDE SIC 1200V

Quantity:

Delivery:

Payment:

In Stock : 260

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$13.889

$13.889
10

$12.23885

$122.3885
100

$10.585185

$1058.5185
500

$9.592834

$4796.417
1000

$8.798948

$8798.948

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1324 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	231W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Mfr	SMC Diode Solutions
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube