SSM3K35AFS,LF

Toshiba Semiconductor and Storage

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SSM3K35AFS,LF

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SSM

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MOSFET N-CHANNEL 20V 250MA SSM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	0.34 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.1Ohm @ 150mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 100µA
Supplier Device Package	SSM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	U-MOSIII
Package / Case	SC-75, SOT-416
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM3K35