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SSM6J409TU(TE85L,F

Toshiba Semiconductor and Storage

Product No:

SSM6J409TU(TE85L,F

Package:

UF6

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 9.5A UF6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22.1mOhm @ 3A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package UF6
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1W (Ta)
Series U-MOSV
Package / Case 6-SMD, Flat Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SSM6J409

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