Home / Single FETs, MOSFETs / TJ200F04M3L,LXHQ

TJ200F04M3L,LXHQ

Toshiba Semiconductor and Storage

Product No:

TJ200F04M3L,LXHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SM(W)

Batch:

Datasheet:

Description:

MOSFET P-CH 40V 200A TO220SM

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TJ200F04M3L,LXHQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TJ200F04M3L,LXHQ and the required quantity in your RFQ. IICSEMI provides the latest quote for TJ200F04M3L,LXHQ without requiring registration. Latest information on TJ200F04M3L,LXHQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TJ200F04M3L,LXHQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	460 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.8mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	TO-220SM(W)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	375W (Tc)
Series	U-MOSVI
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TJ200F04