Home / Single FETs, MOSFETs / TJ9A10M3,S4Q

TJ9A10M3,S4Q

Toshiba Semiconductor and Storage

Product No:

TJ9A10M3,S4Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

TJ9A10M3,S4Q

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TJ9A10M3,S4Q, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TJ9A10M3,S4Q and the required quantity in your RFQ. IICSEMI provides the latest quote for TJ9A10M3,S4Q without requiring registration. Latest information on TJ9A10M3,S4Q: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TJ9A10M3,S4Q latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	19W (Tc)
Series	U-MOSVI
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TJ9A10