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TK055U60Z1,RQ

Toshiba Semiconductor and Storage

Product No:

TK055U60Z1,RQ

Package:

TOLL

Batch:

-

Datasheet:

-

Description:

600V DTMOS VI TOLL 55MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 3970

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.3105

    $5.3105

  • 10

    $4.46215

    $44.6215

  • 100

    $3.60962

    $360.962

  • 500

    $3.208568

    $1604.284

  • 1000

    $2.747334

    $2747.334

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK055U60Z1,RQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK055U60Z1,RQ and the required quantity in your RFQ. IICSEMI provides the latest quote for TK055U60Z1,RQ without requiring registration. Latest information on TK055U60Z1,RQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK055U60Z1,RQ latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 55mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.69mA
Supplier Device Package TOLL
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 270W (Tc)
Series -
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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