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TK065N65Z,S1F

Toshiba Semiconductor and Storage

Product No:

TK065N65Z,S1F

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 38A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 3

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.5265

    $6.5265

  • 10

    $5.59835

    $55.9835

  • 100

    $4.66507

    $466.507

  • 500

    $4.116255

    $2058.1275

  • 1000

    $3.70463

    $3704.63

  • 2000

    $3.471376

    $6942.752

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 65mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.69mA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 270W (Tc)
Series DTMOSVI
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 38A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK065N65

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