Home / Single FETs, MOSFETs / TK090E65Z,S1X

TK090E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK090E65Z,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

650V DTMOS VI TO-220 90MOHM

Quantity:

Delivery:

Payment:

In Stock : 71

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.674

$4.674
10

$3.92825

$39.2825
100

$3.177845

$317.7845
500

$2.824768

$1412.384
1000

$2.41871

$2418.71
2000

$2.277473

$4554.946

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK090E65Z,S1X, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK090E65Z,S1X and the required quantity in your RFQ. IICSEMI provides the latest quote for TK090E65Z,S1X without requiring registration. Latest information on TK090E65Z,S1X: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK090E65Z,S1X latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.27mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	230W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube