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TK100E10N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK100E10N1,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 100A TO220

Quantity:

Delivery:

Payment:

In Stock : 4545

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.6385

$3.6385
10

$3.26515

$32.6515
100

$2.67558

$267.558
500

$2.277663

$1138.8315
1000

$1.920919

$1920.919
2000

$1.824874

$3649.748
5000

$1.756265

$8781.325

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.4mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	255W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK100E10