Home / Single FETs, MOSFETs / TK10A60W,S4X

TK10A60W,S4X

Toshiba Semiconductor and Storage

Product No:

TK10A60W,S4X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 9.7A TO220

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK10A60W,S4X, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK10A60W,S4X and the required quantity in your RFQ. IICSEMI provides the latest quote for TK10A60W,S4X without requiring registration. Latest information on TK10A60W,S4X: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK10A60W,S4X latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	720 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 500µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	30W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10A60