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TK10E60W,S1VX

Toshiba Semiconductor and Storage

Product No:

TK10E60W,S1VX

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

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Datasheet:

Description:

MOSFET N-CH 600V 9.7A TO220

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 500µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	100W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10E60